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s mhop microelectronics c orp. a features super high dense cell design for low r ds(on) . rugged and reliable. to-220 and to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw oct,28,2013 1 details are subject to change without notice. s g d ver 1.0 g d s stf series to-220f absolute maximum ratings ( t c =25 c unless otherwise noted ) product summary v dss i d r ds(on) ( ) typ 200v 1.1 @ vgs=10v symbol v ds v gs i dm w a p d c 75 -55 to 175 i d units parameter 200 5 15 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics STP06N20 drain current-continuous -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg 62.5 c/w thermal resistance, junction-to-ambient r ja t c =25 c 5 15 20 stf06n20 t c =100 c a 3.5 3.5 37.5 w t c =100 c 2 c/w thermal resistance, junction-to-case r jc g d s stp series to-220 25 12.5 a 62.5 6 STP06N20 stf06n20 green product 1.3 @ vgs=4.5v 5a
www.samhop.com.tw oct,28,2013 2 ver 1.0 4 symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) 1v g fs 4 s v sd c iss 423 pf c oss 24 pf c rss 16 pf 9.6 nc 8.7 nc q gs 22.2 nc q gd 4.9 t d(on) ns t r 0.94 ns t d(off) 2 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =100v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =100v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =2.5a v ds =10v , i d =2.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =10ma reverse transfer capacitance on characteristics 3 1.5 b f=1.0mhz b v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 1.4 v 7.2 1.1 0.83 1.6 notes a.drain current limited by maximum junction temperatrue. b.guaranteed by design, not subject to production testing. STP06N20 stf06n20 ohm v gs =4.5v , i d =2.5a r ds(on) drain-source on-state resistance 1.75 1.3 q g nc 4 v ds =100v,i d =1a,v gs =4.5v
figure 1. output characteristics figure 2. transfer characteristics v gs , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain current(a) i d , drain c urrent (a) i d , drain c urrent (a) r ds (on) () f igure 3. on-r es is tance vs . drain c urrent and gate voltage f igure 4. on-r es is tance variation with drain c urrent and temperature on-resistance r ds (on) , tj( c) t j, j unction t emperature ( c ) f igure 6. b reakdown v oltage v ariation with t emperature vth, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) f igure 5. g ate t hreshold v ariation with t emperature ver 1.0 www.samhop.com.tw oct,28,2013 3 3.0 1.8 1.2 0.6 0 0 1 2 3 4 5 6 v gs = 10v 1.0 0.5 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c -55 c tj=125 c 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 v gs =10v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =2.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d = 10ma 0.6 1.2 1.8 2.4 3.0 STP06N20 stf06n20 1.5 2.0 2.5 v gs =4.5v i d =2.5a v gs =4.5v v gs = 4.5v 2.4 v gs = 2.5v v gs = 3.5v v gs = 3v v ds =v gs i d =250ua
is, s ource-drain current (a) f igure 8. b ody diode f orward v olta e v ariation with s ource c urrent v sd , b ody diode f orward v oltage (v ) v gs , gate- s ource voltage (v) r ds (on) () f igure 7. on-r es is tance vs . g ate-s ource v oltage v gs , g ate to s ource v oltage (v ) f igure 10. g ate c harge qg, total gate charge (nc) f igure 9. c apacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) ver 1.0 www.samhop.com.tw oct,28,2013 4 4.8 4.0 3.2 2.4 1.6 0.8 0 10 0 25 c i d = 2.5a 75 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 75 c 125 c 600 500 400 300 200 100 0 010 20 30 40 50 10 8 6 4 2 0 v ds =100v i d = 1 a g ciss coss crss 0 24 68 v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) v ds , drain-s ource v oltage (v ) figure 11a. maximum safe operating area for STP06N20 figure 11b. maximum safe operating area for stf06n20 10 1 0.1 0.01 0.1 1 10 100 1 0 ms 1ms dc v gs =10v single pulse t c =25 c i d , drain c urrent (a) STP06N20 stf06n20 2468 13 57 r d s (on) limit 10 1 0.1 0.01 0.1 1 10 100 10 ms 1ms d c v gs =10v single pulse t c =25 c r ds (on) limit 10 0 u s
ver 1.0 www.samhop.com.tw oct,28,2013 5 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 transient thermal impedance s quare wave p ulse duration (msec) r(t),normalized e ffective d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 square wave pulse duration (msec) figure 12a. normalized thermal transient impedance curve for STP06N20 r(t),normalized effective transient thermal impedance figure 12b. normalized thermal transient impedance curve for stf06n20 STP06N20 stf06n20
ver 1.0 www.samhop.com.tw oct,28,2013 6 STP06N20 stf06n20
ver 1.0 www.samhop.com.tw oct,28,2013 7 e # # . % . d . . ' h d g i j f o a a1 b b1 c c2 e l1 l2 l4 l5 o e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70 STP06N20 stf06n20
to-220 tube ver 1.0 www.samhop.com.tw oct,28,2013 8 STP06N20 stf06n20
ver 1.0 www.samhop.com.tw oct,28,2013 9 f tube STP06N20 stf06n20
www.samhop.com.tw 10 top marking definition to-220 (green) xxxxxx STP06N20 product no. samhop logo wafer lot number production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) smc internal code no. (a,b,c...z) 06n20 xxxxx to-220 (pb free) product no. samhop logo production year (2009 = 9, 2010 = a...) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b...) wafer lot number pb free ver 1.0 STP06N20 stf06n20 oct,28,2013
www.samhop.com.tw 11 top marking definition to-220f (green) product no. samhop logo wafer lot number production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) xxxxxx stf06n20 to-220f (pb free) xxxxx 06n20 product no. samhop logo production year (2009 = 9, 2010 = a...) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b...) wafer lot number pb free smc internal code no. (a,b,c...z) ver 1.0 STP06N20 stf06n20 oct,28,2013

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